TH58BYG2S3HBAI6
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | TH58BYG2S3HBAI6 |
| Manufacturer | Toshiba Memory America, Inc. |
| Description | IC FLASH 4G PARALLEL 67VFBGA |
| Category | Integrated Circuits (ICs) |
| Subcategory | Memory |
| Series | Benand™ |
| Packaging | Tray |
| Access Time | 25ns |
| Memory Size | 4Gb (512M x 8) |
| Memory Type | Non-Volatile |
| Other Names | TH58BYG2S3HBAI6JDH TH58BYG2S3HBAI6YCL |
| Technology | FLASH - NAND (SLC) |
| Package Case | 67-VFBGA |
| Memory Format | FLASH |
| Mounting Type | Surface Mount |
| Voltage Supply | 1.7 V ~ 1.95 V |
| Memory Interface | Parallel |
| Detailed Description | 281643 |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time Word Page | 25ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 3 (168 Hours) |