MB85R256GPF-G-BNDE1
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | MB85R256GPF-G-BNDE1 |
| Manufacturer | Fujitsu Electronics America, Inc. |
| Description | IC FRAM 256K PARALLEL 28SOP |
| Category | Integrated Circuits (ICs) |
| Subcategory | Memory |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Write Cycle Time Word Page | 150ns |
| Voltage Supply | 2.7 V ~ 3.6 V |
| Technology | FRAM (Ferroelectric RAM) |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Moisture Sensitivity Level M S L | 3 (168 Hours) |
| Memory Type | Non-Volatile |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Memory Format | FRAM |
| Detailed Description | FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns |
| Access Time | 150ns |