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MB85R256GPF-G-BNDE1

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Product Details

Part Number MB85R256GPF-G-BNDE1
Manufacturer Fujitsu Electronics America, Inc.
Description IC FRAM 256K PARALLEL 28SOP
Category Integrated Circuits (ICs)
Subcategory Memory
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Write Cycle Time Word Page 150ns
Voltage Supply 2.7 V ~ 3.6 V
Technology FRAM (Ferroelectric RAM)
Operating Temperature -40°C ~ 85°C (TA)
Moisture Sensitivity Level M S L 3 (168 Hours)
Memory Type Non-Volatile
Memory Size 256Kb (32K x 8)
Memory Interface Parallel
Memory Format FRAM
Detailed Description FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns
Access Time 150ns

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