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RGTH00TS65DGC11

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RGTH00TS65DGC11
Manufacturer LAPIS Semiconductor
Description IGBT 650V 85A 277W TO-247N
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
I G B T Type Trench Field Stop
Power Max 277W
Input Type Standard
Packaging Tube
Gate Charge 94nC
Tdonoff25 C 39ns/143ns
Package Case TO-247-3
Mounting Type Through Hole
Test Condition 400V, 50A, 10 Ohm, 15V
Vceon Max Vge Ic 2.1V @ 15V, 50A
Detailed Description 322975
Operating Temperature -40°C ~ 175°C (TJ)
Current Collector Ic Max 85A
Supplier Device Package TO-247N
Reverse Recovery Timetrr 54ns
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 200A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 650V

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