HGTD3N60C3S9A
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | HGTD3N60C3S9A |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | IGBT 600V 6A 33W TO252AA |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| Power Max | 33W |
| Input Type | Standard |
| Packaging | Tape & Reel (TR) |
| Gate Charge | 10.8nC |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Test Condition | 480V, 3A, 82 Ohm, 15V |
| Vceon Max Vge Ic | 2V @ 15V, 3A |
| Switching Energy | 85µJ (on), 245µJ (off) |
| Detailed Description | 323129 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Current Collector Ic Max | 6A |
| Supplier Device Package | TO-252AA |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 24A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 600V |