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Product Image
HGT1S20N60A4S9A

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HGT1S20N60A4S9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 70A 290W TO263AB
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
Power Max 290W
Input Type Standard
Packaging Tube
Gate Charge 142nC
Tdonoff25 C 15ns/73ns
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Test Condition 390V, 20A, 3 Ohm, 15V
Vceon Max Vge Ic 2.7V @ 15V, 20A
Switching Energy 105µJ (on), 150µJ (off)
Detailed Description 323252
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 70A
Supplier Device Package TO-263AB
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 280A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 600V

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