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Product Image
HGT1S12N60A4DS

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HGT1S12N60A4DS
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 54A 167W D2PAK
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
Power Max 167W
Input Type Standard
Packaging Tube
Gate Charge 78nC
Tdonoff25 C 17ns/96ns
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Test Condition 390V, 12A, 10 Ohm, 15V
Vceon Max Vge Ic 2.7V @ 15V, 12A
Base Part Number HGT1S12N60
Switching Energy 55µJ (on), 50µJ (off)
Detailed Description 321074
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 54A
Supplier Device Package TO-263AB
Reverse Recovery Timetrr 30ns
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 96A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 600V

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