APT45GR65BSCD10
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | APT45GR65BSCD10 |
| Manufacturer | Microsemi |
| Description | INSULATED GATE BIPOLAR TRANSISTO |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | NPT |
| Power Max | 543W |
| Input Type | Standard |
| Packaging | Bulk |
| Gate Charge | 203nC |
| Tdonoff25 C | 15ns/100ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 433V, 45A, 4.3 Ohm, 15V |
| Vceon Max Vge Ic | 2.4V @ 15V, 45A |
| Detailed Description | IGBT NPT 650V 118A 543W Through Hole TO-247 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 118A |
| Supplier Device Package | TO-247 |
| Reverse Recovery Timetrr | 80ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 224A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |