APT25GP120BDQ1G
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | APT25GP120BDQ1G |
| Manufacturer | Microsemi |
| Description | IGBT 1200V 69A 417W TO247 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| Series | POWER MOS 7® |
| I G B T Type | PT |
| Power Max | 417W |
| Input Type | Standard |
| Packaging | Tube |
| Gate Charge | 110nC |
| Other Names | APT25GP120BDQ1GMI APT25GP120BDQ1GMI-ND |
| Tdonoff25 C | 12ns/70ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 600V, 25A, 5 Ohm, 15V |
| Vceon Max Vge Ic | 3.9V @ 15V, 25A |
| Switching Energy | 500µJ (on), 440µJ (off) |
| Detailed Description | IGBT PT 1200V 69A 417W Through Hole TO-247 [B] |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 69A |
| Supplier Device Package | TO-247 [B] |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 90A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 1200V |