US6U37TR

Invent, Innovate, Integrate

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Part Number	US6U37TR
Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 30V 1.5A TUMT6
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±12V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
F E T Feature	Schottky Diode (Isolated)
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1.5V @ 1mA
Package Case	6-SMD, Flat Leads
Mounting Type	Surface Mount
Rds On Max Id Vgs	240 mOhm @ 1.5A, 4.5V
Gate Charge Qg Max Vgs	2.2nC @ 4.5V
Detailed Description	352967
Power Dissipation Max	1W (Ta)
Operating Temperature	150°C (TJ)
Supplier Device Package	TUMT6
Drainto Source Voltage Vdss	30V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	80pF @ 10V
Current Continuous Drain Id25 C	1.5A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	2.5V, 4.5V

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