TSM80N1R2CL C0G

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	TSM80N1R2CL C0G
Manufacturer	TSC (Taiwan Semiconductor)
Description	MOSFET N-CH 800V 5.5A TO262S
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Other Names	TSM80N1R2CL C0G-ND TSM80N1R2CLC0G
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-262-3 Short Leads, I²Pak
Mounting Type	Through Hole
Rds On Max Id Vgs	1.2 Ohm @ 1.8A, 10V
Gate Charge Qg Max Vgs	19.4nC @ 10V
Detailed Description	341081
Power Dissipation Max	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-262S (I2PAK)
Drainto Source Voltage Vdss	800V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	685pF @ 100V
Current Continuous Drain Id25 C	5.5A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

I am not a robot