TSM60NB190CM2 RNG

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	TSM60NB190CM2 RNG
Manufacturer	TSC (Taiwan Semiconductor)
Description	MOSFET N-CH 600V 18A TO263
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	TSM60NB190CM2 RNGTR TSM60NB190CM2 RNGTR-ND TSM60NB190CM2RNGTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Rds On Max Id Vgs	190 mOhm @ 6A, 10V
Gate Charge Qg Max Vgs	31nC @ 10V
Detailed Description	325894
Power Dissipation Max	150.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-263 (D²Pak)
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1273pF @ 100V
Current Continuous Drain Id25 C	18A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

I am not a robot