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TSM061NA03CV RGG

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TSM061NA03CV RGG
Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 30V 66A 8PDFN
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names TSM061NA03CV RGGCT TSM061NA03CV RGGCT-ND TSM061NA03CVRGGCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 250µA
Package Case 8-PowerWDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 6.1 mOhm @ 16A, 10V
Gate Charge Qg Max Vgs 19.3nC @ 10V
Detailed Description 345013
Power Dissipation Max 44.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package 8-PDFN (3x3)
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1136pF @ 15V
Current Continuous Drain Id25 C 66A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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