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Manufacturer Image
TPN4R303NL,L1Q

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TPN4R303NL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 30V 63A 8TSON
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series U-MOSVIII-H
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names TPN4R303NLL1QCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.3V @ 200µA
Package Case 8-PowerVDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 4.3 mOhm @ 20A, 10V
Gate Charge Qg Max Vgs 14.8nC @ 10V
Detailed Description 329969
Power Dissipation Max 700mW (Ta), 34W (Tc)
Operating Temperature 150°C (TJ)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1400pF @ 15V
Current Continuous Drain Id25 C 40A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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