TPN2R503NC,L1Q
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
English
English
Deutsch
Français
Español
Italiano
中文
हिन्दी
Lietuviškai
Images are for reference only. See Product Specifications for product details.
| Part Number | TPN2R503NC,L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N CH 30V 40A 8TSON-ADV |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVIII |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | TPN2R503NC,L1Q(M TPN2R503NCL1Q TPN2R503NCL1QTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.3V @ 500µA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 2.5 mOhm @ 20A, 10V |
| Gate Charge Qg Max Vgs | 40nC @ 10V |
| Detailed Description | 334895 |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2230pF @ 15V |
| Current Continuous Drain Id25 C | 40A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |