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Manufacturer Image
TPN1R603PL,L1Q

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TPN1R603PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description X35 PB-F POWER MOSFET TRANSISTOR
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series U-MOSIX-H
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names TPN1R603PL,L1Q(M TPN1R603PLL1Q TPN1R603PLL1QTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 10V @ 10µA
Package Case 8-PowerVDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 1.2 mOhm @ 80A, 10V
Gate Charge Qg Max Vgs 41nC @ 10V
Detailed Description 343853
Power Dissipation Max 104W (Tc)
Operating Temperature 175°C (TJ)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 3900pF @ 15V
Current Continuous Drain Id25 C 80A (Tc)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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