TPN14006NH,L1Q

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Part Number	TPN14006NH,L1Q
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N CH 60V 13A 8TSON-ADV
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	U-MOSVIII-H
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	TPN14006NH,L1Q(M TPN14006NHL1Q TPN14006NHL1QTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 200µA
Package Case	8-PowerVDFN
Mounting Type	Surface Mount
Rds On Max Id Vgs	14 mOhm @ 6.5A, 10V
Gate Charge Qg Max Vgs	15nC @ 10V
Detailed Description	325413
Power Dissipation Max	700mW (Ta), 30W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	8-TSON Advance (3.3x3.3)
Drainto Source Voltage Vdss	60V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1300pF @ 30V
Current Continuous Drain Id25 C	13A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	6.5V, 10V

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