TPH3207WS
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | TPH3207WS |
| Manufacturer | Transphorm |
| Description | MOSFET N-CH 650V 50A TO247 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 2.65V @ 700µA |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | TO-247 |
| Rds On Max Id Vgs | 41 mOhm @ 32A, 8V |
| Power Dissipation Max | 178W (Tc) |
| Packaging | Tube |
| Package Case | TO-247-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| F E T Type | N-Channel |
| Detailed Description | N-Channel 650V 50A (Tc) 178W (Tc) Through Hole TO-247 |
| Current Continuous Drain Id25 C | 50A (Tc) |
| Vgs Max | ±18V |
| Input Capacitance Ciss Max Vds | 2197pF @ 400V |
| Gate Charge Qg Max Vgs | 42nC @ 8V |
| Drive Voltage Max Rds On Min Rds On | 8V |
| Drainto Source Voltage Vdss | 650V |