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Manufacturer Image
TPH2R506PL,L1Q

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TPH2R506PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description X35 PB-F POWER MOSFET TRANSISTOR
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series U-MOSIX-H
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names TPH2R506PL,L1Q(M TPH2R506PLL1Q TPH2R506PLL1QTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 500µA
Package Case 8-PowerVDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 4.4 mOhm @ 30A, 4.5V
Gate Charge Qg Max Vgs 60nC @ 10V
Detailed Description 338786
Power Dissipation Max 132W (Tc)
Operating Temperature 175°C (TJ)
Supplier Device Package 8-SOP Advance (5x5)
Drainto Source Voltage Vdss 60V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 5435pF @ 30V
Current Continuous Drain Id25 C 100A (Tc)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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