TPH2900ENH,L1Q

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Part Number	TPH2900ENH,L1Q
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 200V 33A SOP8
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	U-MOSVIII-H
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	TPH2900ENH,L1Q(M TPH2900ENHL1QTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 1mA
Package Case	8-PowerVDFN
Mounting Type	Surface Mount
Rds On Max Id Vgs	29 mOhm @ 16.5A, 10V
Gate Charge Qg Max Vgs	22nC @ 10V
Detailed Description	333199
Power Dissipation Max	78W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	8-SOP Advance (5x5)
Drainto Source Voltage Vdss	200V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	2200pF @ 100V
Current Continuous Drain Id25 C	33A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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