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Manufacturer Image
TPH1R712MD,L1Q

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TPH1R712MD,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 60A 8SOP ADV
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series U-MOSVI
Vgs Max ±12V
F E T Type P-Channel
Packaging Tape & Reel (TR)
Other Names TPH1R712MD,L1Q(M TPH1R712MDL1QTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1.2V @ 1mA
Package Case 8-PowerVDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 1.7 mOhm @ 30A, 4.5V
Gate Charge Qg Max Vgs 182nC @ 5V
Detailed Description 333779
Power Dissipation Max 78W (Tc)
Operating Temperature 150°C (TJ)
Supplier Device Package 8-SOP Advance (5x5)
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 10900pF @ 10V
Current Continuous Drain Id25 C 60A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 2.5V, 4.5V

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