TK65G10N1,RQ

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	TK65G10N1,RQ
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 100V 65A D2PAK
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	U-MOSVIII-H
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	TK65G10N1,RQ(S TK65G10N1RQTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 1mA
Package Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Rds On Max Id Vgs	4.5 mOhm @ 32.5A, 10V
Gate Charge Qg Max Vgs	81nC @ 10V
Detailed Description	349842
Power Dissipation Max	156W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	D2PAK
Drainto Source Voltage Vdss	100V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	5400pF @ 50V
Current Continuous Drain Id25 C	65A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

Loading security check...

Please verify you are human by completing the security check.