TK62J60W,S1VQ

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Part Number	TK62J60W,S1VQ
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N CH 600V 61.8A TO-3P(N)
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	DTMOSIV
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
F E T Feature	Super Junction
Other Names	TK62J60W,S1VQ(O TK62J60WS1VQ
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3.7V @ 3.1mA
Package Case	TO-3P-3, SC-65-3
Mounting Type	Through Hole
Rds On Max Id Vgs	38 mOhm @ 30.9A, 10V
Gate Charge Qg Max Vgs	180nC @ 10V
Detailed Description	324289
Power Dissipation Max	400W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-3P(N)
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	6500pF @ 300V
Current Continuous Drain Id25 C	61.8A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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