TK31N60W,S1VF

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Part Number	TK31N60W,S1VF
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N CH 600V 30.8A TO247
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	DTMOSIV
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
F E T Feature	Super Junction
Other Names	TK31N60W,S1VF(S TK31N60WS1VF
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3.7V @ 1.5mA
Package Case	TO-247-3
Mounting Type	Through Hole
Rds On Max Id Vgs	88 mOhm @ 15.4A, 10V
Gate Charge Qg Max Vgs	86nC @ 10V
Detailed Description	333657
Power Dissipation Max	230W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-247
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	3000pF @ 300V
Current Continuous Drain Id25 C	30.8A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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