TK30E06N1,S1X

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Part Number	TK30E06N1,S1X
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 60V 43A TO-220
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	U-MOSVIII-H
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tube
Other Names	TK30E06N1,S1X(S TK30E06N1S1X
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 200µA
Package Case	TO-220-3
Mounting Type	Through Hole
Rds On Max Id Vgs	15 mOhm @ 15A, 10V
Gate Charge Qg Max Vgs	16nC @ 10V
Detailed Description	338648
Power Dissipation Max	53W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-220
Drainto Source Voltage Vdss	60V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1050pF @ 30V
Current Continuous Drain Id25 C	43A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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