TK12V60W,LVQ

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Part Number	TK12V60W,LVQ
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N CH 600V 11.5A 5DFN
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	DTMOSIV
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
F E T Feature	Super Junction
Other Names	TK12V60WLVQCT
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3.7V @ 600µA
Package Case	4-VSFN Exposed Pad
Mounting Type	Surface Mount
Rds On Max Id Vgs	300 mOhm @ 5.8A, 10V
Gate Charge Qg Max Vgs	25nC @ 10V
Detailed Description	335920
Power Dissipation Max	104W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	4-DFN-EP (8x8)
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	890pF @ 300V
Current Continuous Drain Id25 C	11.5A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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