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Manufacturer Image
TK12E60W,S1VX

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TK12E60W,S1VX
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N CH 600V 11.5A TO-220
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Series DTMOSIV
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
F E T Feature Super Junction
Other Names TK12E60W,S1VX(S TK12E60WS1VX
Technology MOSFET (Metal Oxide)
Vgsth Max Id 3.7V @ 600µA
Package Case TO-220-3
Mounting Type Through Hole
Rds On Max Id Vgs 300 mOhm @ 5.8A, 10V
Gate Charge Qg Max Vgs 25nC @ 10V
Detailed Description 325900
Power Dissipation Max 110W (Tc)
Operating Temperature 150°C (TJ)
Supplier Device Package TO-220
Drainto Source Voltage Vdss 600V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 890pF @ 300V
Current Continuous Drain Id25 C 11.5A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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