TK10A60E,S4X

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Part Number	TK10A60E,S4X
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 600V TO220SIS
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Other Names	TK10A60E,S4X(S TK10A60E,S5X TK10A60E,S5X(M TK10A60ES4X TK10A60ES4X(S TK10A60ES4X(S-ND TK10A60ES5X TK10A60ES5X-ND
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 1mA
Package Case	TO-220-3 Full Pack
Mounting Type	Through Hole
Rds On Max Id Vgs	750 mOhm @ 5A, 10V
Gate Charge Qg Max Vgs	40nC @ 10V
Detailed Description	339155
Power Dissipation Max	45W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-220SIS
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1300pF @ 25V
Current Continuous Drain Id25 C	10A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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