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Manufacturer Image
SIHB25N50E-GE3

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SIHB25N50E-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 500V 26A TO263
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±30V
F E T Type N-Channel
Packaging Tube
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 250µA
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Rds On Max Id Vgs 145 mOhm @ 12A, 10V
Gate Charge Qg Max Vgs 86nC @ 10V
Detailed Description 337950
Power Dissipation Max 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-263 (D²Pak)
Drainto Source Voltage Vdss 500V
Input Capacitance Ciss Max Vds 1980pF @ 100V
Current Continuous Drain Id25 C 26A (Tc)
Drive Voltage Max Rds On Min Rds On 10V

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