SCT3030ALGC11
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | SCT3030ALGC11 |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET NCH 650V 70A TO247N |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | +22V, -4V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Technology | SiCFET (Silicon Carbide) |
| Vgsth Max Id | 5.6V @ 13.3mA |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 39 mOhm @ 27A, 18V |
| Gate Charge Qg Max Vgs | 104nC @ 18V |
| Detailed Description | N-Channel 650V 70A (Tc) 262W (Tc) Through Hole TO-247N |
| Power Dissipation Max | 262W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-247N |
| Drainto Source Voltage Vdss | 650V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1526pF @ 500V |
| Current Continuous Drain Id25 C | 70A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 18V |