SCT2H12NYTB

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Part Number	SCT2H12NYTB
Manufacturer	LAPIS Semiconductor
Description	1700V 1.2 OHM 4A SIC FET
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	+22V, -6V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
Other Names	SCT2H12NYTBCT
Technology	SiCFET (Silicon Carbide)
Vgsth Max Id	4V @ 410µA
Package Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type	Surface Mount
Rds On Max Id Vgs	1.5 Ohm @ 1.1A, 18V
Gate Charge Qg Max Vgs	14nC @ 18V
Detailed Description	329667
Power Dissipation Max	44W (Tc)
Operating Temperature	175°C (TJ)
Supplier Device Package	TO-268
Drainto Source Voltage Vdss	1700V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	184pF @ 800V
Current Continuous Drain Id25 C	4A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	18V

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