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SCT2750NYTB

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number SCT2750NYTB
Manufacturer LAPIS Semiconductor
Description 1700V .75 OHM 6A SIC FET
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max +22V, -6V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names SCT2750NYTBCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4V @ 630µA
Package Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Rds On Max Id Vgs 975 mOhm @ 1.7A, 18V
Gate Charge Qg Max Vgs 17nC @ 18V
Detailed Description 332874
Power Dissipation Max 57W (Tc)
Operating Temperature 175°C (TJ)
Supplier Device Package TO-268
Drainto Source Voltage Vdss 1700V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 275pF @ 800V
Current Continuous Drain Id25 C 5.9A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 18V

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