RT1C060UNTR

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Part Number	RT1C060UNTR
Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 20V 6A TSST8
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±10V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
Other Names	RT1C060UNCT RT1C060UNTRCT RT1C060UNTRCT-ND
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1V @ 1mA
Package Case	8-SMD, Flat Lead
Mounting Type	Surface Mount
Rds On Max Id Vgs	28 mOhm @ 6A, 4.5V
Gate Charge Qg Max Vgs	11nC @ 4.5V
Detailed Description	354154
Power Dissipation Max	650mW (Ta)
Operating Temperature	150°C (TJ)
Supplier Device Package	8-TSST
Drainto Source Voltage Vdss	20V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	870pF @ 10V
Current Continuous Drain Id25 C	6A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	1.5V, 4.5V

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