RT1A060APTR
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RT1A060APTR |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET P-CH 12V 6A TSST8 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | -8V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | RT1A060APCT RT1A060APTRCT RT1A060APTRCT-ND |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1V @ 1mA |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 19 mOhm @ 6A, 4.5V |
| Gate Charge Qg Max Vgs | 80nC @ 4.5V |
| Detailed Description | P-Channel 12V 6A (Ta) 600mW (Ta) Surface Mount 8-TSST |
| Power Dissipation Max | 600mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-TSST |
| Drainto Source Voltage Vdss | 12V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 7800pF @ 6V |
| Current Continuous Drain Id25 C | 6A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.5V, 4.5V |