RSJ650N10TL

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Part Number	RSJ650N10TL
Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 100V 65A LPTS
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
Other Names	RSJ650N10TLCT
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	2.5V @ 1mA
Package Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Rds On Max Id Vgs	9.1 mOhm @ 32.5A, 10V
Gate Charge Qg Max Vgs	260nC @ 10V
Detailed Description	349445
Power Dissipation Max	100W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	LPTS
Drainto Source Voltage Vdss	100V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	10780pF @ 25V
Current Continuous Drain Id25 C	65A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4V, 10V

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