RS1E300GNTB

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Part Number	RS1E300GNTB
Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 30V 30A 8-HSOP
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	RS1E300GNTBTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	2.5V @ 1mA
Package Case	8-PowerTDFN
Mounting Type	Surface Mount
Rds On Max Id Vgs	2.2 mOhm @ 30A, 10V
Gate Charge Qg Max Vgs	39.8nC @ 10V
Detailed Description	333738
Power Dissipation Max	3W (Ta), 33W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	8-HSOP
Drainto Source Voltage Vdss	30V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	2500pF @ 15V
Current Continuous Drain Id25 C	30A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4.5V, 10V

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