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Product Image
RQ7E110AJTCR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RQ7E110AJTCR
Manufacturer LAPIS Semiconductor
Description NCH 30V 11A MIDDLE POWER MOSFET
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±12V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names RQ7E110AJTCRTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1.5V @ 10mA
Package Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Rds On Max Id Vgs 9 mOhm @ 4.5A, 11V
Gate Charge Qg Max Vgs 22nC @ 4.5V
Detailed Description 333525
Power Dissipation Max 1.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TSMT8
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 2410pF @ 15V
Current Continuous Drain Id25 C 11A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V

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