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Manufacturer Image
RQ3G100GNTB

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RQ3G100GNTB
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 40V 10A TSMT
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names RQ3G100GNTBTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 1mA
Package Case 8-PowerVDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 14.3 mOhm @ 10A, 10V
Gate Charge Qg Max Vgs 8.4nC @ 10V
Detailed Description 343611
Power Dissipation Max 2W (Ta)
Operating Temperature 150°C (TJ)
Supplier Device Package 8-HSMT (3.2x3)
Drainto Source Voltage Vdss 40V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 615pF @ 20V
Current Continuous Drain Id25 C 10A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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