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Manufacturer Image
RQ3E180AJTB

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RQ3E180AJTB
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 18A HSMR8
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±12V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names RQ3E180AJTBTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1.5V @ 11mA
Package Case 8-PowerVDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 4.5 mOhm @ 18A, 4.5V
Gate Charge Qg Max Vgs 39nC @ 4.5V
Detailed Description 339148
Power Dissipation Max 2W (Ta), 30W (Tc)
Operating Temperature 150°C (TJ)
Supplier Device Package 8-HSMT (3.2x3)
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 4290pF @ 15V
Current Continuous Drain Id25 C 18A (Ta), 30A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 2.5V, 4.5V

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