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RQ1C065UNTR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RQ1C065UNTR
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 20V 6.5A TSMT8
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±10V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names RQ1C065UNTRTR RQ1C065UNTRTR-ND
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1V @ 1mA
Package Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Rds On Max Id Vgs 22 mOhm @ 6.5A, 4.5V
Gate Charge Qg Max Vgs 11nC @ 4.5V
Detailed Description 331085
Power Dissipation Max 700mW (Ta)
Operating Temperature 150°C (TJ)
Supplier Device Package TSMT8
Drainto Source Voltage Vdss 20V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 870pF @ 10V
Current Continuous Drain Id25 C 6.5A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 1.5V, 4.5V

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