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Product Image
RP1E090XNTCR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RP1E090XNTCR
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 9A MPT6
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names RP1E090XNTCRCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 1mA
Package Case 6-SMD, Flat Leads
Mounting Type Surface Mount
Rds On Max Id Vgs 17 mOhm @ 9A, 10V
Gate Charge Qg Max Vgs 6.8nC @ 5V
Detailed Description 322630
Power Dissipation Max 2W (Ta)
Operating Temperature 150°C (TJ)
Supplier Device Package MPT6
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 440pF @ 10V
Current Continuous Drain Id25 C 9A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4V, 10V

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