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Product Image
RF4E110GNTR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RF4E110GNTR
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 11A 8-HUML
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Other Names RF4E110GNTRTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 2.5V @ 250µA
Package Case 8-PowerUDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 11.3 mOhm @ 11A, 10V
Gate Charge Qg Max Vgs 7.4nC @ 10V
Detailed Description 322285
Power Dissipation Max 2W (Ta)
Operating Temperature 150°C (TJ)
Supplier Device Package HUML2020L8
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 504pF @ 15V
Current Continuous Drain Id25 C 11A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V, 10V

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