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Product Image
RF4E100AJTCR

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RF4E100AJTCR
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 10A HUML2020L8
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±12V
F E T Type N-Channel
Packaging Cut Tape (CT)
Other Names RF4E100AJTCRCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1.5V @ 1mA
Package Case 8-PowerUDFN
Mounting Type Surface Mount
Rds On Max Id Vgs 12.4 mOhm @ 10A, 4.5V
Gate Charge Qg Max Vgs 13nC @ 4.5V
Detailed Description 324265
Power Dissipation Max 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package HUML2020L8
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1460pF @ 15V
Current Continuous Drain Id25 C 10A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 4.5V

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