RF4E100AJTCR
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RF4E100AJTCR |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET N-CH 30V 10A HUML2020L8 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±12V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | RF4E100AJTCRCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.5V @ 1mA |
| Package Case | 8-PowerUDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 12.4 mOhm @ 10A, 4.5V |
| Gate Charge Qg Max Vgs | 13nC @ 4.5V |
| Detailed Description | N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8 |
| Power Dissipation Max | 2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | HUML2020L8 |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1460pF @ 15V |
| Current Continuous Drain Id25 C | 10A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V |