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RDD022N60TL

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RDD022N60TL
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 600V CPT
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±30V
F E T Type N-Channel
Packaging Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4.7V @ 1mA
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Rds On Max Id Vgs 6.7 Ohm @ 1A, 10V
Gate Charge Qg Max Vgs 7nC @ 10V
Detailed Description 347633
Power Dissipation Max 20W (Tc)
Operating Temperature 150°C (TJ)
Supplier Device Package CPT3
Drainto Source Voltage Vdss 600V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 175pF @ 25V
Current Continuous Drain Id25 C 2A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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