RCD080N25TL

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Part Number	RCD080N25TL
Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 250V 8A SOT-428
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	RCD080N25TLTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	5V @ 1mA
Package Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Rds On Max Id Vgs	300 mOhm @ 4A, 10V
Gate Charge Qg Max Vgs	25nC @ 10V
Detailed Description	350822
Power Dissipation Max	850mW (Ta), 20W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	CPT3
Drainto Source Voltage Vdss	250V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1440pF @ 25V
Current Continuous Drain Id25 C	8A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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