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Manufacturer Image
R8010ANX

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number R8010ANX
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 800V 10A TO220
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±30V
F E T Type N-Channel
Packaging Bulk
Other Names R8010ANXCT R8010ANXCT-ND
Technology MOSFET (Metal Oxide)
Vgsth Max Id 5V @ 1mA
Package Case TO-220-3 Full Pack
Mounting Type Through Hole
Rds On Max Id Vgs 560 mOhm @ 5A, 10V
Gate Charge Qg Max Vgs 62nC @ 10V
Detailed Description 330507
Power Dissipation Max 40W (Tc)
Operating Temperature 150°C (TJ)
Supplier Device Package TO-220FM
Drainto Source Voltage Vdss 800V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1750pF @ 25V
Current Continuous Drain Id25 C 10A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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