R8010ANX
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
English
English
Deutsch
Français
Español
Italiano
中文
हिन्दी
Lietuviškai
Images are for reference only. See Product Specifications for product details.
| Part Number | R8010ANX |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET N-CH 800V 10A TO220 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Bulk |
| Other Names | R8010ANXCT R8010ANXCT-ND |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 5V @ 1mA |
| Package Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 560 mOhm @ 5A, 10V |
| Gate Charge Qg Max Vgs | 62nC @ 10V |
| Detailed Description | 330507 |
| Power Dissipation Max | 40W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-220FM |
| Drainto Source Voltage Vdss | 800V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1750pF @ 25V |
| Current Continuous Drain Id25 C | 10A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |