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Manufacturer Image
R6011KNJTL

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number R6011KNJTL
Manufacturer LAPIS Semiconductor
Description MOSFET N-CHANNEL 600V 11A TO263
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Tape & Reel (TR)
F E T Feature Schottky Diode (Isolated)
Other Names R6011KNJTLTR
Technology MOSFET (Metal Oxide)
Vgsth Max Id 5V @ 1mA
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Rds On Max Id Vgs 390 mOhm @ 3.8A, 10V
Gate Charge Qg Max Vgs 22nC @ 10V
Detailed Description 325679
Power Dissipation Max 124W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-263
Drainto Source Voltage Vdss 600V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 740pF @ 25V
Current Continuous Drain Id25 C 11A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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