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Manufacturer Image
R6009KNX

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number R6009KNX
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 600V 9A TO220FM
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Bulk
F E T Feature Schottky Diode (Isolated)
Technology MOSFET (Metal Oxide)
Vgsth Max Id 5V @ 1mA
Package Case TO-220-3 Full Pack
Mounting Type Through Hole
Rds On Max Id Vgs 535 mOhm @ 2.8A, 10V
Gate Charge Qg Max Vgs 16.5nC @ 10V
Detailed Description 332775
Power Dissipation Max 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220FM
Drainto Source Voltage Vdss 600V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 540pF @ 25V
Current Continuous Drain Id25 C 9A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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