R6007ENX

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Part Number	R6007ENX
Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 600V 7A TO220
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Bulk
Other Names	R6007ENXCT R6007ENXCT-ND
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 1mA
Package Case	TO-220-3 Full Pack
Mounting Type	Through Hole
Rds On Max Id Vgs	620 mOhm @ 2.4A, 10V
Gate Charge Qg Max Vgs	20nC @ 10V
Detailed Description	326993
Power Dissipation Max	40W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-220FM
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	390pF @ 25V
Current Continuous Drain Id25 C	7A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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