NTLJS3113PT1G

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Part Number	NTLJS3113PT1G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 20V 3.5A 6-WFDN
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	µCool™
Vgs Max	±8V
F E T Type	P-Channel
Packaging	Tape & Reel (TR)
Other Names	NTLJS3113PT1G-ND NTLJS3113PT1GOSTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1V @ 250µA
Package Case	6-WDFN Exposed Pad
Mounting Type	Surface Mount
Rds On Max Id Vgs	40 mOhm @ 3A, 4.5V
Gate Charge Qg Max Vgs	15.7nC @ 4.5V
Detailed Description	331913
Power Dissipation Max	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	6-WDFN (2x2)
Drainto Source Voltage Vdss	20V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1329pF @ 16V
Current Continuous Drain Id25 C	3.5A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	1.5V, 4.5V

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