NTJS3151PT1G

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Part Number	NTJS3151PT1G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 12V 2.7A SOT-363
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±12V
F E T Type	P-Channel
Packaging	Tape & Reel (TR)
Other Names	NTJS3151PT1GOSTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1.2V @ 100µA
Package Case	6-TSSOP, SC-88, SOT-363
Mounting Type	Surface Mount
Rds On Max Id Vgs	60 mOhm @ 3.3A, 4.5V
Gate Charge Qg Max Vgs	8.6nC @ 4.5V
Detailed Description	330659
Power Dissipation Max	625mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	SC-88/SC70-6/SOT-363
Drainto Source Voltage Vdss	12V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	850pF @ 12V
Current Continuous Drain Id25 C	2.7A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	1.8V, 4.5V

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